Laboratory for Mathematical Modelling
of Environmental and Technological Processes

A. Kravtsov

Development of Silicon Growth Techniques from a Melt with Surface Heating


The work contains literary and own data on the history of the development of silicon growing technologies with volumetric and surface heating of the melt. The advantages and disadvantages of technologies with surface heating are discussed. Examples are given of the implementation of such processes in the 60-70s of the last century and the reasons for the termination of the relevant works. Principal solutions for the realization of the crystal growth process with electron beam heating of the melt surface realized in KEPP EU (Latvia) are described. Differences in the management of the growing process of crystals with a constant diameter in comparison with the Czochralski method are discussed. The geometric and electro-physical properties of the obtained crystals are presented. Possible application of such crystals and the immediate tasks of technology development are described.

Full paper

Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 161-166.