Laboratory for Mathematical Modelling
of Environmental and Technological Processes

S. Kayser, A. Lüdge, K. Böttcher

Computational Simulations of the of Lateral-Photovoltage-Scanning - Method


The major task for the Lateral-Photovoltage-Scanning-Method is to detect doping striations and the shape of the solid-liquid-interface of an indirect semiconductor crystal. This method is sensitive to the gradient of the charge carrier density. Attempting to simulate the signal generation of the LPS-Method, we are using a three dimensional Finite Volume approach for solving the van Roosbroeck equations with COMSOL Multiphysics in a silicon sample. We show that the simulated LPS-voltage is directly proportional to the gradient of a given doping distribution, which is also the case for the measured LPS-voltage.

Full paper

Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 149-154.