VTPMML
UNIVERSITY OF LATVIA
Laboratory for Mathematical Modelling
of Environmental and Technological Processes

F. Zobel, F. Mosel, J. Sørensen, P. Dold

High-frequency Heat Induction Modeling for a Novel Silicon Crystal Growth Method


Abstract

Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this method is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of the Float Zone method is the possibility for in-situ doping via gas phase. Experimental results on this topic will be shown and discussed.

Full paper



Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 143-148.

https://doi.org/10.22364/mmp2017.20