VTPMML
UNIVERSITY OF LATVIA
Laboratory for Mathematical Modelling
of Environmental and Technological Processes

K. Dadzis, R. Menzel, M. Ziem, T.Turschner, H. Riemann, N.V. Abrosimov

High-frequency Heat Induction Modeling for a Novel Silicon Crystal Growth Method


Abstract

A new method for silicon crystal growth using granulate as feedstock material has been proposed recently. This method bears resemblance to the well-known float zone growth but also places new challenges for both hardware design and numerical modeling. In this study we focus on the high-frequency induction heating. We compare and validate numerical models implemented in the commercial software package Comsol and open source software GetDP, using both analytical solutions and measurements of the 3D magnetic field distribution for real inductor shapes. The options to improve the overall modeling accuracy are discussed. Results from direct measurements of the inductor current and of the temperature-dependent electrical conductivity of silicon granulate are presented.

Full paper



Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 31-36.

https://doi.org/10.22364/mmp2017.4