VTPMML
LATVIJAS UNIVERSITĀTES
Vides un tehnoloģisko procesu
matemātiskās modelēšanas laboratorija
LV

UK
Facebook Jaunumi Piedāvājumi Personāls Kontakti Arhīvs • meteo • klimats
Vides procesi
Tehnoloģiskie procesi
Citi
ERAF
GORWIND
TEMPUS
KALME
Aktuālie projekti
Pabeigtie projekti
Metodikas
Programmas
Mērierices
Gadi
Autori
Latvija
Ārzemes
MHD School 2019
MMP 2017
MEP 2014
OpenFOAM 2011
MMP 2010
Doktorantu kursi 2010
MEP 2008 CD
MMP 2006

Laboratorijas publikāciju saraksts pēc autoriem

Gads 39 publikācijas, kuru autors ir J. Virbulis: Fails
2017 K. Surovovs, M. Plāte, J. Virbulis
High-frequency Heat Induction Modeling for a Novel Silicon Crystal Growth Method

Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 37-42
2017 A. Sabanskis, J. Virbulis
Modelling of Thermal Field and Point Defect Dynamics During Silicon Single Crystal Growth Using CZ Technique

Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 51-56
2017 K. Bergfelds, A. Sabanskis, J. Virbulis
Implementation of Small-scale Laboratory Crystal Growth Furnace for the Development of Mathematical Model for Large-scale Industrial CZ Process

Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 113-118
2017 A. Krauze, A. Kravtsov, J. Virbulis
Modeling Electron Beam Parameters and Plasma Interface Position in an Anode Plasma Electron Gun with Hydrogen Atmosphere

Proceedings of the VIII International Scientific Colloquim "Modelling for Materials Processing", Riga, Latvia, (2017), pp. 167-172
2013Janis Virbulis, Uldis Bethers, Tomas Saks, Juris Sennikovs, Andrejs Timuhins
Hydrogeological model of the Baltic Artesian Basin

Hydrogeology Journal. Official Journal of the International Association of Hydrogeologists. Springer-Verlag Berlin Heidelberg 2013.
2012B. Ubbenjans, C. Frank-Rotsch, J. Virbulis, B. Nacke, P. Rudolph
Numerical Analysis of the Influence of Ultrasonic Vibration on Crystallization Processes

Crystal Research and Technology. (2012) doi: 10.1002/crat.201100413.
nav
2012J.Virbulis, A.Timuhins, I.Klints, J.Seņņikovs, U.Bethers
Script based MOSYS systen for the generation of a three dimensional geological structure Anda the calculation of groundwater flow: case study of the Baltic Artesian Basin

Highlights of groundwater research in the Baltic Artesian Basin, University of Latvia, 2012, ISBN 978-9984-45-602-7, 53-74 lpp.
nav
2012J. Virbulis, J. Seņņikovs
Transient Modeling of Groundwater Dynamics in Baltic Artesian Basin

University of Latvia 70 Scientific Conference – Riga, Latvia, 30 January 2012
nav
2012A. Delina, J. Virbulis, I. Klints
Groundwater Abstraction Dynamics in the Baltic Artesian basin

University of Latvia 70 Scientific Conference – Riga, Latvia, 30 January 2012
nav
2012I. Klints, J. Virbulis, A. Delina
Influence of Water Abstraction on Groundwater Flow in the BAB

University of Latvia 70 Scientific Conference – Riga, Latvia, 30 January 2012
nav
2012J. Sennikovs, A. Timuhins, J. Virbulis
Sensitivity of Hydrogeological Model to the Surface Roughness and Spatial Variablitiy of Hydraulic Conductivity

University of Latvia 70 Scientific Conference – Riga, Latvia, 30 January 2012
nav
2011J. Sennikovs, J. Virbulis, U. Bethers
Mathematical Model of the Baltic Artesian Basin

European Geosciences Union General Assembly 2011, Vienna, Austria, 03 – 08 April 2011
nav
2010T. Sile, J. Virbulis, A. Timuhins, J. Sennikovs, U. Bethers
Modelling of Cavitation and Bubble Growth During Ultrasonic Cleaning Process

International Scientific Colloquium "Modelling for Material Processing", Riga, September 16-17, 2010
2010B. Ubbenjans, Ch. Frank-Rotsch, J. Virbulis, B. Nacke, P. Rudolph
Influence of Ultrasonic Treatment on Crystal Growth From Melt

International Scientific Colloquium "Modelling for Material Processing" Riga, September 16-17, 2010
2006U. Bethers, J. Sennikovs, A. Timuhins, J. Virbulis, D. Zablockis
Modelling of Surface Diffusion in Structured Silicon

Proceedings of the 4th International Scientific Colloquim 'Modelling for Material Processing' - Rīga, Latvia, 2006, pp. 77-82, ISBN 9984-783-85-5
2006U. Bethers, J. Sennikovs, H. Szillat, A. Timuhins, J. Virbulis
Mathematical Modelling of Sintering of SiO2 Crucibles

Proceedings of the 4th International Scientific Colloquim 'Modelling for Material Processing' - Rīga, Latvia, 2006, pp. 123-128, ISBN 9984-783-85-5
2006(Editors A. Jakovics, J. Virbulis)
Modelling for material processing

University of Latvia, Riga, 2006, 258 p.
nav
2006T. Mueller, D. Dantz, W. von Ammon, J. Virbulis, U. Bethers
Modeling of Morphological Changes by Surface Diffusion in Silicon Trenches

ECS Trans. 2, 363 (2006)
nav
2004A. Krauze, A. Muiznieks, A. Mhlbauer, Th. Wetzel, L. Gorbunov, A. Pedchenko, J. Virbulis
Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields

J. Crystal Growth 266 (2004) 40-47
nav
2004Th. Wetzel, J. Virbulis, A. Muiznieks, W. v. Ammon, E. Tomzig, G. Raming, M. Weber
Prediction of the Growth Interface Shape in Industrial 300 mm CZ Si Crystal Growth

J. Crystal Growth 266 (2004)
nav
2003L. Gorbunov, A. Pedchenko, A. Feodorov, E. Tomzig, J. Virbulis, W. v. Ammon
Physical modelling of the melt flow during large-diameter silicon single crystal growth

Journal of Crystal Growth, Sep 2003, pp. 7-18
nav
2002W. v. Ammon, R. Hoelzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Graef
On the mechanism of defect suppression in nitrogen doped silicon single crystals

Solid State Phenomena, Vols. 82-84 2002 pp. 17-24
nav
2002V. Galindo, G. Gerbeth, W. von Ammon, E. Tomzig, J. Virbulis
Crystal growth melt flow control by means of magnetic fields

Energy Conversion and Management 43 (3) (2002) pp. 309-316.
nav
2002J. Virbulis, T. Wetzel, E. Tomzig, W. von Ammon
Silicon melt convection in large size Czochralski crucibles

Materials Science in Semiconductor Processing, Aug 2002
nav
2001O. Grabner; G. Muller; J. Virbulis; E. Tomzig; W. v. Ammon
Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts

Microelectronic Engineering, vol.56, no.1-2; May 2001; p.83
nav
2001J. Virbulis, Th. Wetzel, A. Muižnieks, B. Hanna, E. Dornberger, E. Tomzig, A. Mühlbauer and W. v. Ammon
Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields

Journal of Crystal Growth 230, 2001, pp. 92 - 99
nav
2001W. von Ammon, , R. Hölzl, J. Virbulis, E. Dornberger, R. Schmolke and D. Graf
The impact of nitrogen on the defect aggregation in silicon

Journal of Crystal Growth, Volume 226, Issue 1, June 2001, Pages 19-30
nav
2001Th. Wetzel, A. Mužnieks, A. Mühlbauer, Y. Gelfgat, L Gorbunov, J. Virbulis, E. Tomzig and W. V. Ammon
Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility

J. of Crystal Growth Volume 230, Issues 1-2 August 2001 Pages 81-91
nav
2001A. Muižnieks, G. Raming, A. Mühlbauer, J. Virbulis, B. Hanna and W. v. Ammon
Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations

Journal of Crystal Growth, Volume 230, Issues 1-2, August 2001, Pages 305-313
nav
2001E. Dornberger, W. von Ammon, J. Virbulis, B. Hanna and T. Sinno
Modeling of transient point defect dynamics in Czochralski silicon crystals

Journal of Crystal Growth, Volume 230, Issues 1-2, August 2001, Pages 291-299
nav
2001E. Dornberger, J. Virbulis, B. Hanna, R. Hoelzl, E. Daub and W. von Ammon
Silicon crystals for future requirements of 300 mm wafers

Journal of Crystal Growth, Volume 229, Issues 1-4, July 2001, Pages 11-16
nav
2001W. v. Ammon, E. Tomzig, J. Virbulis, L. Gorbunov, A. Pedchenko, A. Fedorov
Physical modelling of a Czochralski process of semiconductor single crystal growth

Proceedings of 4. International conference Single Crystal Growth and Heat & Mass transfer, Obinsk, Russia, 2001
nav
2000O. Graebner; A. Muehe; G. Mueller; E. Tomzig; J. Virbulis; W. von Ammon
Analysis of turbulent flow in silicon melts by optical temperature measurement

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Volume 73, Issue 1, 2000, Pages 130-133
nav
1999A. Jakovičs, S. Gendelis, H. Truemmann, J. Virbulis
Combined applications of thermography, heat transfer measurement and heat consumption modelling in the reconstruction of buildings

Modelling of material processing. – Riga, 1999, pp. 158 – 167.
nav
1999Virbulis, J.; Wetzel, Th.; Muižnieks, A.; Raming., G.; Rexer, B.; Dornberger, E.; Ammon, W.v.; Mühlbauer, A
Numerical modelling of melt flow during Czochralski silicon crystal growth

Numerical modelling of melt flow during Czochralski silicon crystal growth. Proceedings of the Int. Scientific Colloquium Modelling of Material Processing, Riga , pp. 42-47, May 1999
nav
1998A. Mühlbauer, A. Jakovičs, J. Virbulis, E. Westphal
Transfer processes in the manufacturing of single silicon crystals and high temperature alloys by increasing flow intensity

nav
1997A. Jakovičs, N. Jekabsons, J. Virbulis
Determination of the effective heat transfer coefficient in the elements of existing buildings

Latvian Journal of Physics and Technical Sciences. - 1997, Nr. 2, pp. 71 - 83.
nav
1995J. Virbulis, A. Mühlbauer, A. Jakovičs
Effect of inductor shape on the shape of interfaces and melt convection in floating zone silicon crystal growth

14th International conference on magnetohydrodynamics. - Riga, 1995, 1 p.
nav
1995J. Virbulis, A. Mühlbauer, A. Jakovičs
Numerical modeling of the float zone silicon crystal growth

10th Conference on the computation of electromagnetic fields 'Compumag'. - Berlin, 1995, pp. 606 - 607.
nav